Category Archives: Power Devices

Infineon 130 nm Smart Power BCD Technology

Posted on May 8, 2013 by Chipworks

Contributed by: Sinjin Dixon-Warren and Paul Jagodzinski The approach of ISPSD 2013, which will be held this year in Kanazawa, Japan, May 26-30, stimulated us to look back at some of our recent analyses of the Infineon 130 nm Smart … Continue reading →

Posted in Power Devices | Leave a comment

GaN power electronics HEMT switches come of age

Posted on January 30, 2013 by Chipworks

Dr. St.J. Dixon-Warren GaN power electronics, and related controller technology, has now come of age for low(er) voltage applications – below about 200 V.  Leading research and development groups, both industry and academia, are working on 600 V and higher … Continue reading →

Posted in Power Devices | Leave a comment

ISPSD 2012 – review of packaging technology

Posted on June 8, 2012 by Chipworks

Contributed by Sinjin Dixon-Warren The first talk in the packaging session was presented by S. Shapira of TowerJazz, Israel, and was entitled CMOS DC to DC Switched Converter with On Chip Inductors.  A simplified schematic is shown below, and as … Continue reading →

Posted in General News, Power Devices | Leave a comment

ISPSD 2012 – The latest in GaN technology – finFETs in a different light

Posted on June 7, 2012 by Chipworks

Large band gap materials, principally GaN and SiC seem to be an underlying theme of the ISPSD 2012 conference with a focus on how the work somehow gets silicon closer to the GaN or SiC predicted performance. It is worth … Continue reading →

Posted in General News, Power Devices | Leave a comment