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The Second Shoe Drops – Samsung V-NAND Flash

Contributed by Dick James   Two weeks ago, we posted about the TSMC 20 nm product that we had in-house; now after waiting for a year since Samsung’s announcement of V-NAND production, we have that in the lab and can start to see what it looks like. The vertical flash was first released in an enterprise solid-state [...]

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First Volume Production Phase Change Memory by Micron

A Peek Inside the Micron 1 Gb, 45 nm PCM By: Rajesh Krishnamurthy Phase change memory (PCM) combines the nonvolatile attributes of flash memories like NOR and NAND types, combined with the bit alterability and fast reads and writes of RAM or EEPROM. This positions PCM to potentially provide memory solutions in the memory subsystems [...]

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60th International Solid State Circuits Conference

Contributed by Randy Torrance The 60th International Solid State Circuits Conference (ISSCC) kicked off today. This is the largest annual integrated circuit conference in the world.  Today the educational sessions took center stage. I attended 2 of these: High-Bandwidth Memory Interface Design, Instructor Chulwoo Kim (Korea University) Circuit Design using FinFETs, Instructor Bing Sheu (TSMC) [...]

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IBM surprises with 22nm details at IEDM

Monday afternoon last week at the 2012 IEEE International Electron Devices Meeting, IBM discussed their 22nm SOI high-performance technology [1], aimed at servers and high-end SoC products. To an extent, this is an extension of the 32nm process, using epitaxial SiGe for the PMOS channels and stress, and dual-stress liners for both NMOS and PMOS [...]

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ISSCC 2012 – Hynix eliminates dummy cells in 6F2 DDR3

Contributed by Mike Christie. The International Solid-State Circuits Conference (ISSCC) conference is in full swing. Chipworks is attending to track the newest ideas in circuits and chips for 2012 and are blogging a few notable highlights. Hynix presented a paper entitled ‘A 1.2V 23nm 6F2 DDR3 SDRAM with Local-Bitline Sense Amplifier, Hybrid LIO Sense Amplifier [...]

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Inside the Samsung 512 Mb Phase Change Memory

Contributed by: Rajesh Krishnamurthy This blog posting follows up one comparing Samsung’s NAND flash with its PCM in the same phone. Phase change memory (PCM) combines the nonvolatile attributes of flash memory like NOR and NAND types, bit alterability, and fast read and write of RAM or EEPROM. This positions PCM to potentially provide memory [...]

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