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Competitive Analysis of IGBTs Reveals Their Internal Workings

Contributed by St.J. Dixon-Warren Vertical Insulated Gate Bipolar Transistors (IGBTs) are one of the most important types of discrete power transistors. Structurally, they are similar to discrete, vertical N-type MOSFET devices, except the N-type drain region of the MOSFET is replaced by a P-type collector or anode region. The result is a PNP bipolar structure, [...]

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ISPSD 2013 pt.2 – Interesting Presentations

contributed by Dr. St.J. Dixon-Warren The ISPSD 2013 Conference is now in its third day.  Tuesday night the conference banquet was held at the Hotel Nikko Kanazawa. The conference included a dinner speech by Tomotaka Takahashi, founder of Kyoto University‘s ROBO-GARAGE who demonstrated some of his extraordinary robot technology. But the fun and games weren’t [...]

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Infineon 130 nm Smart Power BCD Technology

Contributed by: Sinjin Dixon-Warren and Paul JagodzinskiThe approach of ISPSD 2013, which will be held this year in Kanazawa, Japan, May 26-30, stimulated us to look back at some of our recent analyses of the Infineon 130 nm Smart Power technology and at previous ISPSD proceedings. In particular, at ISPSD 2011, Ralf Rudolf of Infineon [...]

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GaN power electronics HEMT switches come of age

Dr. St.J. Dixon-Warren GaN power electronics, and related controller technology, has now come of age for low(er) voltage applications – below about 200 V.  Leading research and development groups, both industry and academia, are working on 600 V and higher devices; however, these are not commercially available yet. The benefits of faster switching, higher efficiency [...]

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ISPSD 2012 – review of packaging technology

Contributed by Sinjin Dixon-Warren The first talk in the packaging session was presented by S. Shapira of TowerJazz, Israel, and was entitled CMOS DC to DC Switched Converter with On Chip Inductors.  A simplified schematic is shown below, and as you can see the circuit incorporates an inductor and capacitor that serve level out the [...]

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ISPSD 2012 – The latest in GaN technology – finFETs in a different light

Large band gap materials, principally GaN and SiC seem to be an underlying theme of the ISPSD 2012 conference with a focus on how the work somehow gets silicon closer to the GaN or SiC predicted performance. It is worth noting that so far, in the commercial market, silicon is winning hands down. Chipworks has [...]

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