Patent And Technology Partner To The World's Most Successful Companies

Patent And Technology Partner To The World's Most Successful Companies

Patent And Technology Partner To The World's Most Successful Companies

Message

Archive | Power Devices RSS feed for this section

IEDM 2014 Preview: Part 2

Contributed by Dick James — Follow me on Twitter @ChipworksDick This is part 2 of 2 on IEDM 2014 preview. Click here for Part 1. — Tuesday In the morning we have another seven parallel sessions, starting with session 9 on Advanced CMOS Devices for 10nm Node and Beyond, so another one I will definitely be targeting. The first [...]

Continue Reading

IEDM 2014 Preview: Part 1

Contributed by Dick James — Follow me on Twitter @ChipworksDick This is part 1 of 2 on IEDM 2014 preview. Click here for Part 2. Later this month the good and the great of the electron device world will make their usual pilgrimage to San Francisco for the 2014 IEEE International Electron Devices Meeting.  To quote the conference web front [...]

Continue Reading

Competitive Analysis of IGBTs Reveals Their Internal Workings

Contributed by St.J. Dixon-Warren Vertical Insulated Gate Bipolar Transistors (IGBTs) are one of the most important types of discrete power transistors. Structurally, they are similar to discrete, vertical N-type MOSFET devices, except the N-type drain region of the MOSFET is replaced by a P-type collector or anode region. The result is a PNP bipolar structure, [...]

Continue Reading

ISPSD 2013 pt.2 – Interesting Presentations

contributed by Dr. St.J. Dixon-Warren The ISPSD 2013 Conference is now in its third day.  Tuesday night the conference banquet was held at the Hotel Nikko Kanazawa. The conference included a dinner speech by Tomotaka Takahashi, founder of Kyoto University‘s ROBO-GARAGE who demonstrated some of his extraordinary robot technology. But the fun and games weren’t [...]

Continue Reading

Infineon 130 nm Smart Power BCD Technology

Contributed by: Sinjin Dixon-Warren and Paul JagodzinskiThe approach of ISPSD 2013, which will be held this year in Kanazawa, Japan, May 26-30, stimulated us to look back at some of our recent analyses of the Infineon 130 nm Smart Power technology and at previous ISPSD proceedings. In particular, at ISPSD 2011, Ralf Rudolf of Infineon [...]

Continue Reading

GaN power electronics HEMT switches come of age

Dr. St.J. Dixon-Warren GaN power electronics, and related controller technology, has now come of age for low(er) voltage applications – below about 200 V.  Leading research and development groups, both industry and academia, are working on 600 V and higher devices; however, these are not commercially available yet. The benefits of faster switching, higher efficiency [...]

Continue Reading