| What does LTE mean to the manufacturer? Well, not really just LTE, but the entire complexity around multi-band support. We have already reported on the incredible number of individual devices required to deliver the radio functionality in the iPad 3. Over 19 chips, many of which have more than one die inside. Now the iPad is a device with relatively low space constraints and (being Apple) relatively little price sensitivity. So how do others tackle this problem? The answer in this case, appears to be with different BoMs.
At right is shown the Samsung Galaxy Nexus 4G LTE phone. The battery is shown because it is (slightly) larger than the non 4G version and features the built-in NFC antennae. |
| Comparing 2 Different Samsung Galaxy Nexus Phones
Case in point: Samsung’s Galaxy Nexus line of products. The company’s flagship smart phone features the latest and greatest Android Ice Cream Sandwich operating system, a 4.65 inch “HD SuperAMOLED” screen, and for Verizon in the US, and soon in Canada with our local provider, support for LTE. This is distinct from the Samsung Galaxy Nexus GT9250 (3G version from Hong Kong) that we previously looked inside. In fact it almost appears that the boards were laid out by completely different teams and so a second teardown blog was in order. |
| A couple of notable differences
Most of the major silicon inside the two variants is the same but there are some different chipsets supporting the radio function as well as some less obvious changes. Firstly, the Broadcom BCM4330 was part of a Murata module in the GT9250 and stand alone in the I515. We also found an SMSC USB Transceiver (arrowed) from the USB333X family. This chip is promoted as being a transceiver with support for “RapidChargeAnywhere” technology to reduce battery charging time. SMSC is part of a consortium that contributes to the BC 1.1 standard.What we found interesting is that its board location near the processor and baseband suggest that it is being used as the board-level communications between two parts. We didn’t do any board-level reverse engineering, but it seems reasonable that the battery features are not being used here. |
Here is a look at the major silicon in the I515 BoM with some close-ups of the board:
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<tr>
<td width=”185″><p>Applications Processor</p> </td>
<td width=”380″>TI OMAP 4460</td>
</tr>
<tr>
<td><p>Memory </p> </td>
<td>Samsung K4X51323PK 512 Mb LP DDR2</td>
</tr>
<tr>
<td><p>Gyroscope </p> </td>
<td>Invensense MPU3050M</td>
</tr>
<tr>
<td><p>Primary Camera</p> </td>
<td>S5K4E5YA 5 Mp, 1.4 um</td>
</tr>
<tr>
<td><p>Accelerometer </p> </td>
<td>Bosch BMA220</td>
</tr>
<tr>
<td><p>GPS </p> </td>
<td>SiRF GSD4T-9600B</td>
</tr>
<tr>
<td><p>Near Field Controller</p> </td>
<td>NXP65N00 Smart Card IC containing NXP PN544 & T3035</td>
</tr>
<tr>
<td><p>WiFi </p> </td>
<td>Broadcom BCM4330</td>
</tr>
<tr>
<td><p>Transceiver</p> </td>
<td>Future Communications FC7780 and FC7851</td>
</tr>
<tr>
<td><p>Touchscreen Controller </p> </td>
<td>MELFAS 8PK782</td>
</tr>
<tr>
<td><p>Li-Ion Management </p> </td>
<td>Maxim MAX17403</td>
</tr>
<tr>
<td><p>Flash Memory </p> </td>
<td>SanDisk SDIN5C2</td>
</tr>
<tr>
<td><p>Baseband </p> </td>
<td>VIA Telecom CBP7.1</td>
</tr>
<tr>
<td>Front End Module</td>
<td>Avago ALM2712</td>
</tr>
</table>

















































































