Archive for the ‘Analog and RF’ Category

Circuit highlights from the Texas Instruments WiLink 7.0 (and more)

Monday, April 30th, 2012 by rwilliamson

The Texas Instruments WL1283 (WiLink 7) is a topic on which we have written in the past.  It is a multi-band chip with an impressive set of specifications, in a small size that competes with the market leader, the Broadcom 4330. Each brings their own set of specifications to the table with the TI device supporting GPS natively while the Broadcom device promotes Bluetooth 4.0 compliance.

However, it was interesting to note  that in reference to the Bluetooth functionality, Texas Instruments’ spec sheet touted “best in class RF performance” and  “Bluetooth 3.0 and Bluetooth Low Energy support”. But wait a minute… isn’t Bluetooth LE a hallmark feature of the Bluetooth 4.0 specification? Confused? So were we.  What it means is that the WL1283 is implementing classic Bluetooth and low energy Bluetooth, but not Bluetooth HS.  What matters is that the WL1283 device targets a high volume socket that delivers a lot of advanced capabilities to the latest smart phones at a competitive price.  And with the performance touted we thought we would look a little deeper at the Bluetooth block. The full reports can be ordered here.

Enter, something new for Chipworks – Circuit Analysis Videos. These short videos feature, engineer-to-engineer discussion of  one or two interesting blocks from leading devices targeted more at circuit designers than product managers or process R&D teams. For the full YouTube channel visit

http://www.youtube.com/user/ChipworksCorp/videos

iPAD 3 LTE/3G – Multi-band support is very complex

Tuesday, March 27th, 2012 by chipworks

Contributed by Gary Tomkins and Jim Morrison

The new iPad is Apple’s first device that uses 4G LTE and also supports multiband 3G. In fact, it supports 700 MHz and 2100 MHz LTE, UMTS/HSPA/HSPA+/DC-HSDPA  at 850, 900, 1900, 2100 MHz  (all 3G), and GSM/EDGE  at 850, 900, 1800, and 1900 MHz. That is seven different radio standards and six different frequencies! And of course, it also has a Wi-Fi (802.11 a/b/g/n) transceiver and Bluetooth.

To do all of this takes a lot of silicon (and GaAs devices). In the 4G version of the new iPad, attached to the main board is a secondary board dedicated to the cellular radios. We counted 19 different major packages, 10 on one side and 9 on the other, and many that contain more than one die!

Apple's New iPad Cellular Board – Side 1

Apple's New iPad Cellular Board – Side 2

Let’s take a closer look at these RF components. Working from the right edge of side 1, we can see three antenna connections that make up the main antenna, the GPS antenna and the diversity antenna. (Antenna diversity is a technique that multiplexes the RF signals from a different antenna to improve signal quality in the receiver.) Connected to the antennas are Murata modules. Let’s discuss these one by one.

First up, we have a Murata device with package markings PFBA. This is a Murata PA (power amplifier) device. We have seen many Murata switch modules before, but a PA from Murata, this is news. The package is marked with Murata markings, but the major die inside carries Panasonic die markings. (It appears that Murata and Panasonic are collaborating on this device. How does that play with the recent Murata acquisition of Renesas’ PA group?)

Below are package photographs, X-rays, and die image of the Murata/Panasonic PA device. The Panasonic die is a single chip dual band PA and the x-ray shows two duplexers. In the X-Ray below, the primary Panasonic die can be identified by the wire bonds, and the other two GaAs dies are more opaque to the x-rays and show up as dark rectangles.

Murata/Panasonic PA Device Package Photograph

Murata PFBA PA Top X-Ray

Murata PFBA PA Side X-Ray

Murata/Panasonic PA Die Markings

Next up is the Murata package marked SWUA. This device is a Murata and Peregrine SP6T Rx diversity switch/module. Module is a more appropriate description for these components, as the X-rays clearly show that there is more than one device involved in making these modules work, but the heart of the device is the Peregrine SP6T silicon-on-sapphire switch die.

The last design win we had witnessed for Peregrine was the key win of the main RF antenna switch (an SP8T in a Murata antenna switch module) in the current iPhone 4s that was released in October 2011. Peregrine’s solution brings efficiency to the game over alternative solutions. Unlike GaAs devices that need separate external components for control and charge pump functionality, the silicon-on-sapphire (SOS) solution employed by Peregrine enables embedded switching, control logic, and voltage pumps on the same die as the switch array.

Murata/Peregrine SP6T Rx Package Photograph

Murata/Peregrine SP6T Rx Top X-Ray

Murata/Peregrine SP6T Rx Side X-Ray

Murata/Peregrine SP6T Rx Die Photograph

For some details on Peregrine’s design win in the first iPhone, and the background on their SOS technology, read one of our older blogs here.

On to the traditional PA suppliers, where the die are fabricated on gallium arsenide (GaAs) substrates (typically InGaP HBT and GaAs pHEMT devices) that still reign superior over silicon for this application because the power efficiency of these die significantly affect battery consumption. The GaAs HBT die are more efficient than current generation silicon-based power amplifiers.

First off, we have the TriQuint TQM7M5013, a quad-band 850/900/1800/1900 MHz GSM, GPRS, Edge PA module that contains three separate PA die.

TriQuint GSM PA Module Package Photograph

TriQuint GSM PA Module X-Ray

TriQuint GSM PA Module X-Ray

TriQuint GSM PA Module Side X-Ray

Next up, we have the Skyworks 77468-16, a band 8, 900 MHZ W-CDMA/HSDPA/HSPA+ PA and duplexer. The X-ray shows the PA die, duplexer, and impedance matching components co-packaged with the PA die.

Skyworks 77468-16 Package Photograph

Skyworks 77468-16 Top X-Ray

Skyworks 77468-16 Side X-Ray

Moving onto the Avago part, we see their Band 4 UMTS/LTE power amplifier module in the component marked A5904.

Avago ACPM5904 Package Photograph

Avago ACPM5904 Top X-Ray

Avago ACPM5904 Side X-Ray

Contained within the RF section of the iPad 3, we see a 1 Gb Micron SLC NAND flash. Given what Qualcomm is saying about the Gobi 4000 chipset, it requires, in addition to the MDM9600 processor and PM8028 power management IC, an external flash memory chip to hold the specific carrier profile to make the single Gobi hardware set work in any carrier environment and under any operating system (Windows, Android, or Apple OS).

Micron SLC NAND Flash Device

Also on this side of the cellular board is the Qualcomm RTR8600 LTE/UMTS/GSM transceiver. The die measures 6.55 mm x 3.95 mm and carries the die markings HG11-VF535-220.

Qualcomm RTR8600 Package Photograph

Qualcomm RTR8600 Die Photograph

The power management component for the transceiver is the Qualcomm PM8028. The die measures 5.83 mm  x 3.11 mm. The PM8028 and the RTR8600 are very successful devices for Qualcomm, and have been observed by Chipworks in dozens of smartphones.

Qualcomm PM8028 Package Photograph

Qualcomm PM8028 Die Photograph

Qualcomm PM8028 Die Markings

That’s a lot of information to absorb, so here’s a summary:

Apple's New iPad Main Board Side 1 - Devices Identified

On the opposite side of the motherboard, we have another Murata component marked SPM QRD01. This device is the main RF antenna switch module with Murata package markings but inside, yet again, we have two Peregrine SP8T silicon-on-sapphire switches.

Murata SPM QRD01 Package Photograph

Murata SPM QRD01 Top X-Ray

Murata SPM QRD01 Side X-Ray

Murata SPM QRD01 Die Photograph

Murata SPM QRD01 Die Markings

Directly below the Murata/Peregrine ASM, we have an Avago ACPM7792 band 2 power amplifier module.

Avago ACPM7792 Package Photograph

Avago ACPM7792 Top X-Ray

Avago ACPM7792 Side X-Ray

Next to the Murata/Peregrine ASM, we have the Skyworks SKY77469-16 band 5 power amplifier module.

Skyworks SKY77469-16 Package Photograph

Adjacent to the Skyworks PAM, we have an Avago A5917 band 17 LTE power amplifier module.

Avago A5917 Package Photograph

The large device on side 2 is a Qualcomm MDM9600, the RF processor, another multichip package that contains a 512 Mb Samsung memory die co-packaged with the 90 mm² processor die.

MDM9600 Die Photograph

Samsung 512 Mb Device Die Photograph

Back on the main board, at the opposite end from the cellular board, we have the Wi-Fi and Bluetooth radio. This is integrated within the Broadcom BCM4330 802.11/Bluetooth/FM combination chip surrounded by a few smaller die; these are RF devices such as the GaAs pHEMT low noise amplifiers for 2.4 GHz and 5 GHz 802.11 channels that are made by Skyworks.

Broadcom BCM4430 Package Photograph

Skyworks Device Package Photograph

Skyworks Device Package Photograph 2

Skyworks Device Die Photograph

Skyworks Device Die Markings

The Apple iPad 4G LTE only services the North American 700 MHz and 2100 MHz LTE bands. With multiple standards for GSM, CDMA, and 3G, it is already complicated enough to manufacture worldwide compatible devices. (There are 16 UMTS channels used for 3G). With LTE, this will become significantly more complex with up to 43 channels. As you can see, the quantity of chips needed to make this happen is incredible. With the specialist RF devices needed to optimize signal and power efficiency, it is going to be a very difficult task to simplify this process.

Texas Instruments Product Ecosystem has Power Covered

Wednesday, February 8th, 2012 by rwilliamson

We have been documenting the success of Texas Instruments by the simple method of watching their design wins in mobile devices. TI certainly leads the globe in analog foundry capacity, and with the acquisition of National Semiconductor gets the benefit of some (already paid for) space at the 2012 APEC conference.

We took the chance to sit down with Michael Gilbert, Senior Product Marketing Manager for Isolated Power.  Long title, but he presented some of TI’s roadmap and coverage in the power sector and they seem to have the breadth and technology to continue their growth (dominance?).

They were right on top of the news makers in GaN by announcing several FET drivers that were specifically architected for GaN devices. This is a new market and Mr. Gilbert was, “not aware of anyone other than Transphorm and EPC that were producing in any kind of volume”. That said, TI has invested in what is a very promising technology.

Comparing the size of Si and GaN Devices

The designs specifically handle GaN challenges like, “never going above 6V at the gate and getting to zero very fast”.

Specifically they have the LM5113 100V integrated half bridge, high-side driver, the new LM5114 low-side driver, and the new UCC27511 high-speed 4-A/*-A low-side driver. You can see the influence of some National Semiconductor part numbers here. They are also launching a “coming soon” 5.4 MHz, 4.5-V to 60-V synchronous buck controller for GaN FETs or MOSFETs expected to be in the hands of clients towards the end of H1.  The point is, TI is investing heavily in the latest upstart technology.

TI Digital Power Ecosystem

In terms of the overall coverage, TI is acknowledged as having a huge analog portfolio, but from their ecosystem slide they certainly have coverage in the digital power ecosystem, whether this is with traditional analog chips, analog solutions with digital interfaces or mixed signal MCUs. And they continue to invest.

At the show they announced their next generation digital controller for isolated power, the UCD3138 and it is touted as the first highly integrated controller optimized for AC/DC and isolated DC/DC power supplies. Rather than re-purposing existing technology, the device was specifically designed for this application to limit die size and keep the cost very competitive. It includes 32K of flash, an ARM7 32-bit processor, high speed precision data converters, multiple programmable hardware control loops, analog peripherals and various communications engines.

UCD3138 Architecture

As a digital device, they have the expected GUI-configurable programmability and also includes advanced monitoring capabilities. Several development kits are available from TI.

  • Development kits:
    • UCD3138PFCEVM-026: Universal input, 400-Vout AC/DC PFC development kit, configurable into single- or two-phase interleaved and bridgeless topologies
    • UCD3138PSFBEVM-027: 400-Vin/12-Vout DC/DC phase-shifted full bridge
    • UCD3138LLCEVM-028: 400-Vin/12-Vout DC/DC half-bridge resonant LLC
    • UCD3138HSFBEVM-029: 48-Vin/12-Vout DC/DC hard-switching full-bridge
  • Reference designs:
    • Universal input, 12-Vout 600-W AC/DC reference design (PFC plus LLC, and PFC plus phase-shifted full-bridge)
    • 48-Vin/12-Vout 1/8 brick DC/DC reference design (hard-switching full bridge)

More to come from APEC – stay tuned!

Texas Instruments, “SimpleLink”…Cooking Meatballs from Anywhere

Wednesday, January 18th, 2012 by jmorrison

Last week at CES we had a great time visiting the Texas Instruments Wireless Group. We met up with Heather Ailara. Heather is the Media Relations Manager for TI’s Worldwide Wireless Communications Wireless  Business Unit. Heather introduced us to Matt Kurtz, the worldwide platforms and channel marketing manager for TI’s wireless connectivity solutions business unit. 

Matt introduced us to a new definition of a term that I have been using for sometime now; “connected devices”. Matt’s definition was very different than mine. When I speak of connected devices, I think of tablets and smart phones and things like this. When Matt speaks of connected devices, he is speaking of crocks pots. Yes I said it, crock pots. 

Texas Instruments CC3000 SimpleLink
The world of connected devices

 

Texas Instruments introduced us to a platform of low cost, low power products that are going to re-shape our future. One of the products is the SimpleLink Wi-Fi CC3000 chipset supporting the IEEE802.11 b/g standard for WiFi connectivity.  This chipset is uniquely designed for the special purpose of running in conjunction with low cost, low power Texas Instruments microcontrollers. 

The demonstration that really caught my attention was the operation of a Hamilton Beach crock pot from a smart phone. With phone in hand Matt was able to turn the crock pot on or off and or adjust cook settings. Come on, I am on the ski slopes enjoying my day when I realize I want the meatballs to be ready in time for some apres ski spaghetti and meatballs. Whip out my iPhone and boom, meatballs on! I realize this may seem funny, but think of what the future holds. In time, virtually every device in our home will have the ability to be controlled remotely through our tablets or smart phones or whatever means you use to connect to the internet. 

Matt called it ubiquitous connectivity. Texas Instruments is offering a complete solution that is easy to integrate, low power, low memory foot print and not so MIPS-intensive. We speak of application processors in our smart phones running at 1.x GHz. To implement this solution, we need only speak of 25 MHz and a 16 bit MCU. 

When we had a chance to sit down and ask some questions, I jumped to the conclusion that these devices we being fabbed on older lines at TI on process nodes like 0.18 um or 0.25 um. But Matt surprised me. These devices are being fabbed on 65 nm low power CMOS at their foundries like UMC and TSMC and others. 

This was a surprise, but when you think about it, using a node like 65 nm, you get lower power, more die per wafer, smaller foot print and lower cost. And with a smaller node like this, you can hard code the WiFi software stack into ROM, taking the load off the MCU, and removing the need for high-end processors. Perfect for an application that could run into the hundreds of millions or even billions. 

This is an area of growth for Texas Instruments. This device is only the start of a roadmap – they see it as an investment in the future and hope that it will be a big percentage of their revenue in the years to come. I can see TI’s revenue portfolio looking very different in 2015 and beyond! I can see Texas Instruments doing just this. Who else can offer so much to deliver these emerging connectivity solutions? TI has the biggest portfolio of wireless technology, proven hardware, leading edge MCU’s, and world-wide support. 

Texas Instruments Portfolio for Emerging Connectivity Solutions

TI's portfolio for emerging connectivity solutions

This will take time to trickle into our home. I for one am looking forward to a future where I can control my home, truly, from my smart phone. I think I may look into getting an evaluation kit so I can retrofit my crock pot now, so I can get those meatballs cooking.

Looking at the LIN Bus I/O on the Atmel ATA6843 Motor Controller

Wednesday, December 14th, 2011 by chipworks

Contributed by: St.J. Dixon-Warren, James Mihaychuk, and Bing Liu

>>Part 1 of 2.  Next we will look at the Toshiba TPD4135AK IGBTs

The Atmel ATA6843 provides an interface between a microcontroller and a brushless DC motor. It requires six discrete power MOSFETs to drive the motor versus a similar part we looked at recently, the Toshiba TPD4135AK, which uses integrated lateral IGBTs. The ATA6843 also features a local interconnect network (LIN) interface, which will be the main focus of this discussion.

National Instruments provides a very nice introduction to the LIN bus. They describe it as a low cost embedded networking standard for connecting intelligent devices. LIN is most popular in the automotive industry. LIN provides cost-efficient communication in applications where the bandwidth and versatility of a controller area network (CAN) are not required. LIN can be implemented relatively inexpensively using the standard serial universal asynchronous receiver/transmitter (UART) embedded into most modern low cost 8 bit microcontrollers.

According to the ATA6843 datasheet, the LIN bus terminal is on pin 13, with the LIN ground being on pin 12. Atmel claims the LIN pin has outstanding ESD performance, so we performed a bit of extra analysis on this part of the die.

Figure 1 presents an X-ray of the ATA6843. The LIN pins are annotated in the bottom left corner of the package X-ray. The high motor drive pads at the right side and the low side motor drive pins along the top would be connected to the discrete power MOSFET gates. Short circuit sense pins are located between the high side drive pads.

Figure 1. Atmel ATA6843 Package X-Ray

The bond wires from the LIN and LIN GND pads are connected to two bond pads in the bottom left corner of the die, as shown in the die photograph of Figure 2. The locations of the motor drive bond pads are also indicated. These pads are connected directly to the output of the banks of LDMOS transistors.

Figure 2. Atmel ATA6843 Die Photograph

When we focus on the bottom left corner, we see the details for the LIN bus I/O, shown in Figure 3. Essentially, the I/O transmit (TX) consists of an LDMOS transistor, with the source connected to the LIN GND, and the drain connected to the LIN bond pad. The location of the TX LDMOS gate control line, which is connected to the chip circuitry, is also indicated. The LIN bond pad is protected by an ESD diode, which is wired in parallel with another protection diode structure. A second similar protection diode structure, located above the first in the photograph, is wired to the LIN GND, which then connects in series to the TX LDMOS drain. The I/O receive (RX) is comprised of a block of circuitry located above the second diode protection structure.

Chipworks has performed a circuit analysis of the Atmel ATA6622 LIN bus transceiver. The layout topology for the LIN bus I/O circuitry was very similar to that seen on the Atmel ATA6843.

Figure 3. Atmel ATA6843 LIN I/O at Top Metal

Figure 4 shows the details for the LIN bus I/O after the die has been deprocessed to the polysilicon layer.

Figure 4. Atmel ATA6843 LIN I/O at Polysilicon

Cross-sectional analysis of the ESD diode confirmed it to be a simple diode formed within a silicon-on-insulator (SOI) substrate. Figure 5 and Figure 6 show the results of scanning electron and scanning capacitance microscopy (SEM and SCM) of the ESD diode in cross section. The P-anode side is connected to the LIN pad and directly to the RX circuitry, while the N-cathode side is connected to the TX LDMOS transistor drain, and to the protection diode structures for both the LIN and LIN GND pads. As mentioned, the LIN GND is connected to the source of the TX LDMOS in parallel with the upper protection diode structure.

Figure 5. Atmel ATA6843 LIN Pad ESD Protection Diode – SEM

Figure 6. Atmel ATA6843 LIN Pad ESD Protection Diode – SCM

The ATA6843 represents another smart power device targeting automotive applications. The device achieves impressive functionality and integration, while using a 0.8 µm BCD-SOI (BiCMOS-DMOS-SOI) process. The ATA6843 includes a LIN bus I/O that appears to be essentially identical to that found on the ATA6622.

Reports referenced in this blog: