We’ve already started our analysis of Samsung’s new DRAM modules featuring its long awaited 3D stacked die packaging technology.

The K4AAG045WD-4CRB chips include four stacked dies using through silicon vias (TSVs) for vertical interconnect. Our lab’s initial X-ray analysis confirms the DDR4 SDRAM is indeed a four-die stack.  A quick decap of one of the parts revealed die markings of K4A4G085WD, corresponding to Samsung’s 4 Gb D-die DDR4 SDRAM.

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