Process Analysis
Process Analysis: Sophisticated tools and seasoned experts.
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Chipworks analyzes numerous types of chip technology including CMOS, bipolar, BiCMOS, GaAs, SiGe, SOI, MEMS and optical processes. We use sophisticated analytical techniques to identify the specific aspects of a chip's structure, including the following:
- Feature sizes
- Material composition
- Fabrication techniques
- Doping levels in the silicon substrate
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As a result of these technology analyses, Chipworks publishes a wide range of process analysis reports, including our flagship Structural Analysis Reports (SAR) and our Process Review Reports (PRR and IPR).
Chipworks' engineers and laboratory staff use advanced analytical instruments and sample preparation techniques to fully characterize the processes used in fabricating semiconductor devices. Each technique provides our analysts with another inside-view to ensure a thorough investigation.
- Optical microscopy: Our high-quality optical microscopes provide detailed photographs of die features and markings, along with detailed, high resolution photographs of the full die.
- Field emission scanning electron microscopy (SEM): This is our key tool for reverse engineering work, where we use a scanning electron beam to provide detailed micrographs with sub-5 nm resolution.
- Transmission electron microscopy (TEM): This is the most powerful microscope in Chipworks' arsenal; one that allows us to transmit electrons through a thin sample with lattice image resolution.
- Scanning probe microscopy (SPM and SCM): This technique provides complementary information which is often critical for a full understanding of a device. The atomic force mode (AFM) provides roughness and morphology information, while the scanning capacitance mode (SCM) provides dopant profiles with sub 100 nm resolution.
- Energy dispersive x-ray spectroscopy (EDS): This SEM/TEM based technique provides elemental characterization of the materials used in an IC.
- Secondary ion mass spectrometry (SIMS): This standard method determines the composition of dielectric layers and dopants used in the substrate of a semiconductor device.
- Spreading resistance profiling (SRP): This process is used to measure the carrier concentration as a function of depth for the wells, epitaxial and buried layers in a semiconductor device.
Related Process Analysis Capabilities & Resources: