Featured Reports

Samsung 7 nm EUV technology analysis

Posted: August 14, 2019 TechInsights is looking forward to analyzing Samsung’s Exynos 9825, which is manufactured using the 7 nm EUV process. We expect to see this soon in the Samsung Galaxy Note 10. As we did with the Samsung 10 nm LPE process , we will provide a product brief for the 7 nm EUV

Innovator in focus: Texas Instruments

Posted: August 14, 2019 Texas Instruments Are you interested in Texas Instruments’ innovations? They are one of the biggest players in semiconductor design and manufacturing. Last year’s revenue was $15.78B USD, with a 68.4% market share in analog (power & signal chain), and a 22.5% market share in

Innovation Technology: Micron

Posted: July 23, 2019 Micron Technology With 2018 revenue of $30.4B USD, 16.5% market share in NAND Flash Memory, and 23% market share in DRAM, Micron is one of the biggest players in storage and memory technology. For those looking to support their product development roadmap, circuit extraction,

Velodyne LiDAR Puck Teardown

Posted: July 22, 2019 Velodyne LiDAR Puck According to BIS Research, the automotive LiDAR market was estimated at $353M USD in 2017, and is anticipated to reach $8.32B by 2028. The LiDAR market is set to become one of the most competitive segments of the automotive industry. LiDAR manufacturers,

Ambiq Micro Apollo 3 Blue Ultra-Low Power MCU

Posted: June 11, 2019 Ambiq Micro Apollo 3 Blue Ultra-Low Power MCU The MCU marketplace is crowded and competitive, with semiconductor companies globally increasing R&D spend in this technology area; this market is forecast to reach ~$20B USD in 2019. This continued growth stems from the need for

1y DDR4 DRAM from Samsung, SK hynix and Micron

Posted: June 7, 2019 Samsung LPDDR4X 17 nm 1Y Samsung DDR4 17 nm 1Y Micron MT40A2G4SA-062E 8Gb DDR4 The top 3 DRAM manufacturers (Samsung, SK hynix, and Micron) reached sub-20 nm in 2017 and 2018 with the introduction of 1x. A new milestone was reached with the introduction of 1y by Samsung with

Qualcomm QTM052 mmWave Antenna Module

Posted: May 31, 2019 Qualcomm QTM052 mmWave Antenna Module Qualcomm claims to have “Made the impossible, possible” by incorporating mmWave technology into the mobile RF front end in a small, highly integrated module. There are many challenges associated with the use of mmWave componentry, because of

9X Layer 3D NAND Analysis

Posted: April 10, 2019 TechInsights’ Analysis of Solutions from Samsung, Toshiba, and Intel/Micron TechInsights’ analysis has begun on the much-anticipated 9XL 3D NAND solutions, including: Samsung 92L 3D V-NAND Toshiba 96L 3D BiCS Intel/Micron 96L 3D FG/PUC NAND Flash We are also eagerly

Intel 10 nm Logic Process Analysis (Cannon Lake)

Posted: June 12, 2018 Intel 10nm Logic Process Analysis TechInsights has found the long-awaited Cannon Lake - the Intel 10 nm logic process inside the i3-8121U CPU, used in the Lenovo IdeaPad330. This innovation boasts the following: Logic transistor density of 100.8 mega transistors per mm 2 ,

SK hynix 72L 3D NAND Analysis

Posted: May 31, 2018 SK hynix 72L 3D NAND Analysis SK hynix claims to have created the industry’s first-ever 72-layer 256Gb 3D NAND flash. This innovation has a block size 50% larger compared to 48-layer 3D TLC chips, it has a lower programming time (tPROG), the memory bit density, with 3.55 Gb/mm 2

Micron 1x nm DDR Analysis

Posted: May 14, 2018 TechInsights has found the Micron 1x nm process in the Micron DIMM (DDR4) and Huawei Mate 10 (LPDDR4). This process brings about smaller die sizes and increased bit density over its predecessor, but it also presented a bit of a surprise… The Micron 1xs nm. When we analyzed a

Samsung S5K2X7SP 0.9 µm Image Sensor

Posted: March 8, 2018 Samsung S5K2X7SP Image Sensor We did not expect to see the Samsung S5K2X7SP image sensor until Q2, 2018…but here it is in the Vivo V7+. The application is a 24 MP selfie camera that uses Samsung’s Tetracell platform (2x2 pixels per color filter). In well-illuminated scenes the